FD-SOI and finfets. There are three reasons why FD-SOI is a better way to go than finfet, says Horacio Mendez, director of the SOI consortium. There are three reasons why FD-SOI is a better way to go than finfet, says Horacio Mendez, director of the SOI consortium.
Ultra-thin body (UTB) fully depleted (FD) silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) have emerged as the viable solution to the extreme downscaling of CMOS technology to the sub-14-nm nodes, because of its dramatic suppression of short-channel effects (SCEs), and its superiority of low-power high-speed application ( 1, 2, 3 ).
FD SOI device shows better control of threshold voltage as compared with FinFET SOI device in inversion mode. But in accumulation mode FinFET SOI devices shows better response on threshold voltage.
Designing AI Accelerators with Innovative FinFET and FD-SOI Solutions by Daniel Nenni July 29, 2020; Contact over Active Gate Process Requirements for 5G by Tom Dillinger July 1, 2020; Embedded MRAM for High-Performance Applications by Tom Dillinger June 21, 2020; Webinar on eNVM Choices at 28nm and below by Globalfoundries by Tom Simon March 31, 2020; GLOBALFOUNDRIES Sets a New Bar for.
This is Part II of a two-part paper that explores the 28-nm UTBB FD-SOI CMOS and the 22-nm Tri-Gate FinFET technology as the better alternatives to bulk transistors especially when the transistor’s architecture is going fully depleted and its size is becoming much smaller, 28-nm and above.
Since the technology has been aggressively reduced in size over the last few decades, the FinFET device is effectively suppressed by the short channel effect (SCE) and other parasitic effects in comparison with the conventional bulk devices. At the same time more physics based modeling is used to investigate device's electrical behavior. FD SOI FinFET device with triple gate or gate all around.
This paper reviews recent results for SOI finFET and thin-BOX FD-SOI technologies (14, 15), and via 3D atomistic process and device simulations compares them with the bulk MOSFET technology at the 22 nm technology node, with analytical modeling for SRAM yield estimation. In addition, iso-area and iso-yield comparison between the FD-SOI and the bulk cells are shown. II. MOSFET DESIGNS Fig. 1.a.
Fully depleted silicon-on-insulator (FD-SOI) could grow rapidly in the wake of Globalfoundries’ plans for a 12nm process, and paplications processors and modems could adopt advanced 12nm FD-SOI as an alternative to 10nm and potentially 7nm FinFETs. Of course, the adoption of FD-SOI depends on whether Globalfoundries'recently announced FD-SOI 12nm process comes early in the market, and on.